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| FDD306P P-Channel 1.8V Specified PowerTrench(R) MOSFET January 2005 FDD306P P-Channel 1.8V Specified PowerTrench(R) MOSFET Features -6.7 A, -12 V. RDS(ON) = 28 m @ VGS = -4.5 V RDS(ON) = 41 m @ VGS = -2.5 V RDS(ON) = 90 m @ VGS = -1.8 V Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Applications DC/DC converter General Description This P-Channel 1.8V Specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It has been optimized for battery power management. S G S TO-252 D G D Absolute Maximum Ratings TA=25C unless otherwise noted Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) TJ, TSTG RJC RJA RJA Operating and Storage Junction Temperature Range Parameter Ratings -12 8 -6.7 -54 52 3.8 1.6 -55 to +175 Units V V A W C C/W C/W C/W Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 2.9 40 96 Package Marking and Ordering Information Device Marking FDD306P Device FDD306P Reel Size 13'' Tape width 12mm Quantity 2500 units (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDD306P Rev. C FDD306P P-Channel 1.8V Specified PowerTrench(R) MOSFET Electrical Characteristics TA = 25C unless otherwise noted Symbol Off Characteristics BVDSS BVDSS TJ IDSS IGSSF VGS(th) VGS(th) TJ RDS(on) Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -10 V, VGS = 0 V VGS = 8V, VDS = 0 V VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = -4.5 V, ID = -6.7 A VGS = -2.5 V, ID = -6.1 A VGS = -1.8 V, ID = -4.8 A VGS = -4.5 V, ID = -6.7A, TJ = 125C VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -6.7 A VDS = -6 V, VGS = 0 V, f = 1.0 MHz -45 22 -0.4 -0.5 2.2 21 29 42 25 28 41 90 -12 -0.6 -1 100 -1.5 V mV/C A nA Parameter Test Conditions Min Typ Max Units On Characteristics (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance V mV/C m ID(on) gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD Trr Irm Qrr On-State Drain Current Forward Transconductance A S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS = 15 mV, f = 1.0 MHz VDD = -6 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 1290 590 430 4.2 pF pF pF 29 16 54 65 21 ns ns ns ns nC nC nC Switching Characteristics (Note 2) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -6V, ID = -6.7 A, VGS = -4.5 V 16 8 34 41 15 2.0 4.4 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Current Diode Reverse Recovery Charge VGS = 0 V, IS = -3.2 A IF = -6.7 A, diF/dt = 100 A/s (Note 2) (Note 3) -0.8 37 0.9 17 -3.2 -1.2 A V ns A nC Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA = 40C/W when mounted on a 1in2 pad of 2 oz copper b) RJA = 96C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD ----------------------R DS ( ON ) where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. 4. Starting TJ = 25C, L = TBD, IAS = -6.7A 2 FDD306P Rev. C www.fairchildsemi.com FDD306P P-Channel 1.8V Specified PowerTrench(R) MOSFET Typical Characteristics 54 VGS = -4.5V -3.5V -3.0V 2.5 VGS = -1.8V RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 45 -I D, DRAIN CURRENT (A) -4.0V -2.0V 2 36 27 -2.5V -2.5V 1.5 -3.0V -3.5V -4.5V -2.0V 18 9 0 0 1 2 3 -1.8V 1 0.5 4 0 9 18 27 36 45 54 -V DS, DRAIN-SOURCE VOLTAGE (V) -I D, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.1 1.4 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) 1.3 1.2 1.1 1 0.9 I D = -6.7A VGS = -4.5V I D = -3.4A 0.08 0.06 TA = 125C 0.04 T A = 25C 0.02 0.8 -50 0 -25 0 25 50 75 100 125 150 175 0 2 4 6 8 10 TJ, JUNCTION TEMPERATURE (C) -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. 54 VDS = - 5V TA = -55C 125C Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V -ID, DRAIN CURRENT (A) 25C 36 27 18 9 0 0 1 2 3 4 -VGS , GATE TO SOURCE VOLTAGE (V) -I S, REVERSE DRAIN CURRENT (A) 45 10 1 T A = 125C 0.1 0.01 0.001 0.0001 0 0.2 0.4 25C -55C 0.6 0.8 1 1.2 -V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3 FDD306P Rev. C www.fairchildsemi.com FDD306P P-Channel 1.8V Specified PowerTrench(R) MOSFET Typical Characteristics 5 I D = -6.7A 2400 2000 V DS = -4V f = 1MHz VGS = 0 V -V GS, GATE-SOURCE VOLTAGE (V) 4 CAPACITANCE (pF) -8V 1600 Ciss 3 -6V 1200 Coss 2 800 Crss 1 400 0 0 4 8 12 16 20 0 3 6 9 12 Q g, GATE CHARGE (nC) -V DS, DRAIN TO SOURCE VOLTAGE (V) 0 Figure 7. Gate Charge Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 20 SINGLE PULSE RJA = 96C/W TA = 25C 100 -ID, DRAIN CURRENT (A) RDS(ON) LIMIT 10ms 100ms 1s 10s DC VGS =-4.5V SINGLE PULSE RJA = 96 oC/W TA = 25 oC 1ms 15 10 10 1 5 0.1 0.01 0.1 1 10 100 0 0.001 0.01 0.1 1 t 1, TIME (sec) 10 100 1000 -V DS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 RJA (t) = r(t) * R JA RJA = 96 C/W P(pk) 0.01 t1 t2 T J - T A = P * RJA (t) Duty Cycle, D = t 1 /t 2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. 4 FDD306P Rev. C www.fairchildsemi.com FDD306P P-Channel 1.8V Specified PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM Across the board. Around the world.TM OPTOLOGIC OPTOPLANARTM The Power Franchise PACMANTM Programmable Active DroopTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 5 FDD306P Rev. C www.fairchildsemi.com |
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